| 摘要 |
<p>A method of manufacturing an NAND flash memory device is provided to increase a program threshold voltage by removing interference effect and to improve the yield of a wafer by reducing a threshold voltage shift value of a cell. A method of manufacturing an NAND flash memory device includes the steps of: forming a plurality of gate lines in which a floating gate, a dielectric layer(306), and a control gate are stacked on a semiconductor substrate(300); forming a buffer insulation layer(320) and a conductive layer on the semiconductor substrate including the gate lines; etching the conductive layer so that the conductive layer remains higher than the dielectric layer; and forming spacers(324) in sidewalls of the gate lines. The buffer insulation layer is formed of an oxide. The buffer insulation layer has a thickness ranging from 100 Å to 300 Å. During the formation of the buffer insulation layer, it not fully filled between the gates.</p> |
