| 摘要 |
An image sensor is provided to improve dark current and low illumination by recovering a defect like a dangling bond capable of being generated in etching a photodiode. An interlayer dielectric(120) including a metal interconnection(130) is disposed on a semiconductor substrate(100) including circuitry(110). A photodiode pattern(145) of a crystalline structure is disposed on the interlayer dielectric to be connected to the metal interconnection. A hard mask pattern(155) is disposed on the photodiode pattern. An isolation trench(147) is formed between the photodiode patterns to separate the photodiode patterns from each other. Impurity ions are implanted into the inner wall of the isolation trench to form a barrier layer(160). An isolation layer(170) is formed on the interlayer dielectric including the photodiode pattern and the isolation trench. The barrier layer can be made of p-type impurities.
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