| 摘要 |
A method of forming a device isolation layer of a semiconductor memory device is provided to form the device isolation layer with excellent quality by activating impurities such as H, N of a lower surface of a trench to move the impurities to a upper portion of the trench, and performing a wet curing process to improve out-gassing and features such as Si-O substitution or density. A method of forming a device isolation layer of a semiconductor memory device includes the steps of: sequentially forming a tunnel insulation layer(201) and a conductive layer(202) for a floating gate on a semiconductor substrate(200); performing an etch process to selectively etch the conductive layer for a floating gate, the tunnel insulation layer, and the semiconductor substrate, thereby forming a trench(206); forming a liner oxide layer(208) on the entire structure with the trench; depositing an insulation layer on the entire structure with the liner oxide layer; performing a heat treatment process using laser to move impurities in the insulation layer of a lower surface of the trench to the insulation layer of a upper portion of the trench; and performing a curing process.
|
