| 摘要 |
<p>A method for fabricating a phase shift mask having a size-corrected pattern is provided to correct easily a size of a particular pattern by forming a transmittance control pattern for controlling a transmittance of light. A phase shift layer(202) and a light shielding layer(204) are formed on a substrate(200). The light shielding layer is patterned. A CD(Critical Dimension) of the patterned light shielding layer is measured. A transmittance control pattern(208) is formed on the substrate including a correcting target region. A photoresist pattern(210) having a size than a size of a light shielding layer pattern is formed on the substrate including the light shielding layer pattern. The phase shift layer is patterned by using the photoresist pattern as a mask. The photoresist pattern is removed.</p> |
