| 摘要 |
A substrate comprising a first region of a first semiconductor (106) and a second region of second semiconductor (116), wherein the first semiconductor and the second semiconductor are different, is disclosed. The substrate comprises a dialectric layer having a single phase, single domain crystalline stracture. The dielectric layer comprises a rare-earth metal. The substrate is particularly supportive of p-channel MOSFETs (602) and n-channel MOSFETs (604) having carrier mobility that is closer than in substrates comprising a single semiconductor.
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