| 摘要 |
PROBLEM TO BE SOLVED: To achieve a more silicon-rich silicide composition of NMOS than the silicide composition of PMOS without any need for suppressing the supply of nickel to the silicon of NMOS. SOLUTION: A method of manufacturing a semiconductor device includes: a process for forming a silicon layer on a substrate via a gate insulating film; a process for patterning the silicon layer to form a gate electrode (first gate electrode) of NMOS and a gate electrode (second gate electrode) of PMOS; a process for forming a silicon oxide film selectively on the first gate electrode made of silicon; a process for forming a first metal film made of a silicified metal on the first and second gate electrodes after the process for forming the silicon oxide film; and a process for performing first heat treatment to form a first silicide that is the silicide of the silicified metal composing the first metal film. COPYRIGHT: (C)2008,JPO&INPIT
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