发明名称 |
MANUFACTURING METHOD FERROELECTRIC CAPACITOR |
摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a ferroelectric capacitor further improving crystal orientation properties in a ferroelectric film. SOLUTION: The manufacturing method allows a ferroelectric capacitor 3 to be manufactured. The ferroelectric capacitor 3 has: the ferroelectric film 13; and a lower electrode 12 and an upper electrode 14 for clamping the ferroelectric film 13. A process for forming the ferroelectric film 13 comprises: a process for forming a first ferroelectric layer 13a of a crystal phase on the lower electrode 12 by an organic metal chemical vapor deposition method; a process for forming a second ferroelectric layer of an amorphous phase on the first ferroelectric layer 13a; a process for crystallizing the second ferroelectric layer of an amorphous phase; and a process for forming a third ferroelectric layer 13c of a crystal phase on the second crystallized ferroelectric layer 13b by the organic metal chemical vapor deposition method. COPYRIGHT: (C)2008,JPO&INPIT
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申请公布号 |
JP2008227217(A) |
申请公布日期 |
2008.09.25 |
申请号 |
JP20070064597 |
申请日期 |
2007.03.14 |
申请人 |
SEIKO EPSON CORP |
发明人 |
NAWANO MASAHISA;TAMURA HIROAKI |
分类号 |
H01L21/8246;H01L21/316;H01L27/105 |
主分类号 |
H01L21/8246 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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