| 摘要 |
PROBLEM TO BE SOLVED: To provide a laser-annealing method and a laser-annealing device that allow efficient annealing of an arbitrary area by using a laser beam with a narrow slope part. SOLUTION: The laser annealing method is configured as follows. A spot-like continuous oscillation laser beam is emitted along in a second direction intersecting with a first direction by repeatedly sweeping the continuous oscillation laser beam at a high speed and at a fixed amplitude while scanning the continuous oscillation laser beam on a semiconductor film in the first direction. Before a previously-swept region is completely solidified, new sweep in which the position of the first direction is updated is executed while overlapping an irradiation region. A solid-liquid interface corresponding to the fixed amplitude is moved in the first direction as a whole so as to crystallize the semiconductor film. COPYRIGHT: (C)2008,JPO&INPIT
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