发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PROBLEM TO BE SOLVED: To enlarge capacitance per unit area in a semiconductor integrated circuit having a capacity element. SOLUTION: The semiconductor integrated circuit includes: a first electrode; a transistor formed on a semiconductor substrate and having a second electrode: and third and fourth electrodes formed on the same wiring layer. The first electrode is connected to a diffusion region constituting the transistor. The second electrode constitutes the gate of the transistor. The third and fourth electrodes respectively have a comb shape, and at least a part of each electrode is superimposed on the transistor. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008226998(A) 申请公布日期 2008.09.25
申请号 JP20070060543 申请日期 2007.03.09
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 KOMATSU SHIGEYUKI
分类号 H01L21/822;H01L21/3205;H01L23/52;H01L27/04 主分类号 H01L21/822
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