发明名称 |
SEMICONDUCTOR INTEGRATED CIRCUIT |
摘要 |
PROBLEM TO BE SOLVED: To enlarge capacitance per unit area in a semiconductor integrated circuit having a capacity element. SOLUTION: The semiconductor integrated circuit includes: a first electrode; a transistor formed on a semiconductor substrate and having a second electrode: and third and fourth electrodes formed on the same wiring layer. The first electrode is connected to a diffusion region constituting the transistor. The second electrode constitutes the gate of the transistor. The third and fourth electrodes respectively have a comb shape, and at least a part of each electrode is superimposed on the transistor. COPYRIGHT: (C)2008,JPO&INPIT
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申请公布号 |
JP2008226998(A) |
申请公布日期 |
2008.09.25 |
申请号 |
JP20070060543 |
申请日期 |
2007.03.09 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
KOMATSU SHIGEYUKI |
分类号 |
H01L21/822;H01L21/3205;H01L23/52;H01L27/04 |
主分类号 |
H01L21/822 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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