VERTICAL SPIN TRANSISTOR AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To propose a spin transistor having a new structure and its manufacturing method. SOLUTION: The vertical spin transistor is provided with a first source drain layer including a layer made of magnetic substance; a projection structure including a channel layer that is formed on the first source drain layer and includes a layer made of semiconductor and a second source drain layer that is formed on the channel layer and includes a layer made of magnetic substance; a gate insulation film formed on the side face of the channel layer; and a gate electrode formed on the surface of the gate insulation film. COPYRIGHT: (C)2008,JPO&INPIT