发明名称 METHOD FOR MANUFACTURING A AISNAL LINE, THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME
摘要 <p>A method for manufacturing signal lines, a TFT(Thin Film Transistor) array substrate, and a method for manufacturing the same are provided to shorten a manufacturing time and reduce a manufacturing cost by forming data lines, a semiconductor layer, and an ohmic contact layer all together or a passivation film and pixel electrodes all together using a single mask. In a method for manufacturing signal lines, a lower film containing one or more metal layers is formed. An upper film containing cooper is formed at the upper part of the lower film. A photoresist pattern is formed at the upper part of the upper film. Using the photoresist pattern as an etching mask, the upper film is selectively performed by wet etching. Using the photoresist pattern as an etching mask, dry etching is performed for the lower film. An etchant used for wet etching contains ethylene glycol, sulfuric acid, nitric acid, and pure water.</p>
申请公布号 KR20080078093(A) 申请公布日期 2008.08.27
申请号 KR20070017654 申请日期 2007.02.22
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, DO HYUN;SHIN, WON SUK;JEONG, CHANG OH;PARK, HONG SICK;LEE, EUN GUK;LEE, JE HUN
分类号 G02F1/136;H01L29/786 主分类号 G02F1/136
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