| 摘要 |
A semiconductor light emitting device and fabrication method thereof is provided to improve the luminous efficiency by forming a concave part in each semiconductor layer according to the penetrating potential of the defect-free semiconductor layer. A semiconductor layer(120) is formed on a substrate(110) in which the mask pattern(112) is formed while being composed of gaN, inN, alN, inGaN, alGaN or InAlGaN. The concave part(125) is formed on the surface of the first semiconductor layer, and the concave part is formed like a reverse horn. A buffer layer is formed between the substrate and semiconductor layer. The second semiconductor layer(130) is formed on the first semiconductor layer, and the active layer(140) is formed on the second semiconductor layer. The concave part(145) is formed on the surface of the active layer, having a reverse horn shape.
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