Method of forming a high-frequency transistor gate electrode

摘要

A method of forming a T-type gate electrode of a high-frequency transistor having excellent high-frequency power transfer characteristic with no concave and protrusion, which comprises the steps of: forming a first resist pattern (3) having a first relatively narrow opening (2) on a semiconductor substrate (1) and forming a leg portion (61) of an electrode in the first opening by depositing electrode metal thereon; forming a second resist pattern (5) having a second relatively wide opening (4) on the electrode leg portion for locating an exposed tip of the electrode leg portion in the bottom of the second opening and forming a head portion (62) of the electrode by depositing electrode metal in the second opening; and removing a protrusion (11) formed in the head portion by etching.