SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND FABRICATION METHOD FOR THE SAME

摘要

A semiconductor integrated circuit device and manufacturing method thereof are provided to form the trench separately by changing the shape of the optical mask and to perform the additional trench isolation process. A plurality of trenches is extended in the semiconductor substrate(100) in one direction. At least one connection trench(350) connects at least two among a plurality of trenches. The gate insulating layer is conformably formed in the inner surface of a plurality of trenches. The gate electrode is formed on the gate insulating layer to fill at least a part of the trench. The capping layer is charged within at least one connection trench.