发明名称 VAPOR DEPOSITION SYSTEM AND VAPOR DEPOSITION METHOD
摘要 A deposition apparatus and the deposition method are provided to control the deposition rate and film thickness with the high precision by setting the means controlling the flow rate of the depositing material. The vacuum chamber(1) has the deposition space for performing the film growth. The material accommodation part(7) is charged with the depositing material. A plurality of pipings(8,9) supplies the depositing material(6) to the deposition space of the vacuum chamber from the material accommodation part. The fluidic control device(10) controls the flow rate of the depositing material, or blocks/opens the flow. The evaporation source(5) heats up the material accommodation part and sublimes the depositing material.
申请公布号 KR20090024081(A) 申请公布日期 2009.03.06
申请号 KR20080086172 申请日期 2008.09.02
申请人 CANON KABUSHIKI KAISHA 发明人 ONUMA TAKAHIDE;UKIGAYA NOBUTAKA;SODA TAKEHIKO;KURAMOCHI KIYOSHI;SUSHIHARA TOMOKAZU;NAKANE NAOHIRO
分类号 H01L21/205 主分类号 H01L21/205
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