| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a good-quality low-k insulating film. SOLUTION: First, application liquid R obtained by dispersing a hollow structure group consisting of at least one of Si, N, C, O, and H elements into solution as an insulating film forming material is applied to a substrate to form an application film 4. Subsequently, the substrate is heated to bake the application film to form the porous low-k insulating film. In this method, a material originally having cavities is dispersed into the solution as the insulating film forming material to form the low-k insulating film with lower density. The insulating film has pores formed in the cavities having chemically bonded shells, and so it has high mechanical strength. COPYRIGHT: (C)2009,JPO&INPIT
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