| 摘要 |
PROBLEM TO BE SOLVED: To reduce the probability of occurrence of silicide short circuiting between a deletion gate and a plug which is connected to a diffusion layer. SOLUTION: The nonvolatile semiconductor storage device comprises a floating gate formed on a semiconductor substrate; a deletion gate formed on the floating gate; a control gate formed on one side face of the floating gate and the deletion gate, while being juxtaposed to the floating gate in a channel region on the top layer of the semiconductor substrate; a first diffusion layer formed in the semiconductor substrate, at a position corresponding to the other side face of the floating gate and the deletion gate; a plug formed in the first diffusion layer to be connected with the first diffusion layer and located on the side of the floating gate and the deletion gate; a first silicide film formed on the upper face of the deletion gate; and a second silicide film formed on the upper face of the plug, where the upper surface of the plug is located at the same height as that of the upper surface of the deletion gate or lower. COPYRIGHT: (C)2009,JPO&INPIT
|
