发明名称 METHOD OF FORMING THICK FILM OF OXIDE SUPERCONDUCTOR
摘要 <p>To provide an oxide superconductor thick film formation method that can enhance adhesiveness of a Bi2223 thick film to a body to be processed on which the Bi2223 thick film is formed, and increase a cross-sectional area of the Bi2223 thick film, without a decrease in Jc of the Bi2223 thick film. A mixture of a compound oxide having composition Bi2212 and Pb is applied to a surface of the body to be processed, and burned to form a first thick film. An oxide superconductor thick film expressed by a general formula (Bi, Pb) 2+a Sr 2 Ca 2 Cu 3 O Z (where -0.1 ‰ a ‰ 0.5) is formed on the first thick film.</p>
申请公布号 EP1961703(A1) 申请公布日期 2008.08.27
申请号 EP20060834787 申请日期 2006.12.15
申请人 DOWA ELECTRONICS MATERIALS CO., LTD.;CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY 发明人 KOJIMA, MASAHIRO;KAWAHARA, MASAKAZU;ICHIKAWA, MICHIHARU;KADO, HIROYUKI
分类号 C01G29/00;C04B35/45;C04B35/626;C04B41/50;H01L39/24 主分类号 C01G29/00
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