发明名称 |
METHOD OF FORMING THICK FILM OF OXIDE SUPERCONDUCTOR |
摘要 |
<p>To provide an oxide superconductor thick film formation method that can enhance adhesiveness of a Bi2223 thick film to a body to be processed on which the Bi2223 thick film is formed, and increase a cross-sectional area of the Bi2223 thick film, without a decrease in Jc of the Bi2223 thick film. A mixture of a compound oxide having composition Bi2212 and Pb is applied to a surface of the body to be processed, and burned to form a first thick film. An oxide superconductor thick film expressed by a general formula (Bi, Pb) 2+a Sr 2 Ca 2 Cu 3 O Z (where -0.1 ‰ a ‰ 0.5) is formed on the first thick film.</p> |
申请公布号 |
EP1961703(A1) |
申请公布日期 |
2008.08.27 |
申请号 |
EP20060834787 |
申请日期 |
2006.12.15 |
申请人 |
DOWA ELECTRONICS MATERIALS CO., LTD.;CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY |
发明人 |
KOJIMA, MASAHIRO;KAWAHARA, MASAKAZU;ICHIKAWA, MICHIHARU;KADO, HIROYUKI |
分类号 |
C01G29/00;C04B35/45;C04B35/626;C04B41/50;H01L39/24 |
主分类号 |
C01G29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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