Systems and methods for UV lithography

摘要

A method for designing a lithographic mask (104) for use in lithographic processing of a substrate (106), the lithographic processing comprising irradiating mask features (202, 204, 206) of a lithographic mask (106) using a predetermined irradiation configuration. The method for designing a lithographic mask (106) comprises obtaining an initial design for the lithographic mask comprising a plurality of initial design features having an initial position, applying at least one shift to at least one initial design feature and deriving there from an altered design so as to compensate for shadowing effects when irradiating the substrate using a lithographic mask corresponding to said altered design in said predetermined irradiation configuration. The present invention also relates to a corresponding design, a method for setting up lithographic processing, a system for designing a lithographic mask, a lithographic mask and a method for manufacturing it.