MASK FOR CRYSTALLIZATION OF POLY SILICON AND MANUFACTURE METHOD OF POLY SILICON SUBSTRATE USING THE SAME

摘要

A mask for crystallization of poly silicon and a manufacture method of a poly silicon substrate using the same are provided to remove anisotropy by forming a polysilicon layer through a mask including a first exposure unit with first hexagonal transmissive patterns and a second exposure unit with second hexagonal transmissive patterns opposed to the first transmissive patterns. A mask for crystallization of poly silicon comprises a first exposure unit and a second exposure unit. The first exposure unit has first transmissive patterns(412) and a first light blocking pattern(414). The first transmissive patterns are formed like a hexagon and separated from one another. The first light blocking pattern surrounds the first transmissive patterns. Located next to the first exposure unit, the second exposure unit includes second light blocking patterns(422) and a second transmissive pattern(424). The light blocking patterns are opposite to the first transmissive patterns. The second transmissive pattern is opposite to the first light blocking pattern.