发明名称 |
Photoelectric conversion device and method of manufacturing the same |
摘要 |
A photoelectric conversion device comprises a photoelectric conversion element disposed at a semiconductor substrate, and a multilayered wiring structure including a plurality of wiring layers disposed over the semiconductor substrate in such a manner to sandwich an interlayer insulation film therebetween. A diffusion suppressing film is disposed at least on the uppermost one of the wiring layers, the diffusion suppressing film serving to suppress diffusion of material forming the uppermost wiring layer; the diffusion suppressing film covers regions of the uppermost wiring layer and the interlayer insulation film corresponding to the photoelectric conversion element; and a lens is disposed with respect to a region of the diffusion suppressing film corresponding to the photoelectric conversion element. |
申请公布号 |
EP1962346(A2) |
申请公布日期 |
2008.08.27 |
申请号 |
EP20080151693 |
申请日期 |
2008.02.20 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
MISHIMA, RYUICHI;NARUSE, HIROAKI |
分类号 |
H01L27/146 |
主分类号 |
H01L27/146 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|