| 摘要 |
A solid state imaging device and an imaging apparatus are provided to prevent color mixture and implement higher sensitivity as well as an improved dependency of sensitivity and spectral response on the voltage Vsub to apply can be intended by using the solid state imaging device to the imaging apparatus. A solid state imaging device comprises a plurality of photo sensor parts(21), a first well region(13), a second well region(14), and a first conductive region. The plurality of photo sensor parts are formed by providing on a semiconductor substrate. A light receiving area and a photoelectric conversion area both configures the light receiving pixel. The first well region is formed on the opposite side of the light receiving area with the photoelectric conversion area of the photo sensor being interposed therebetween, has a second conductive type opposite to the first conductive type, and forms an overflow barrier. The second well region of the second conductive type is formed in an area except a place corresponding to the photo sensor part on the opposite side of the photoelectric conversion area with the first well region being interposed therebetween. The first conductive region is formed in an area corresponding to the photo sensor part on the opposite side of the photoelectric conversion area with the first well region being interposed therebetween.
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