| 摘要 |
A low temperature receiving amplifier and an amplifying method are provided to implement a low noise index, a high saturation output, and high power added efficiency by using a GaAs(Gallium-Arsenic) HEMT(High Electron Mobility Transistor) at a first stage and a GaN(Gallium-Nitrogen) HEMT at a second stage. A low temperature receiving amplifier includes a GaN HEMT(110) as an amplifying element, an input matching circuit(120), a gate bias circuit(130), an output matching circuit(140), and a drain bias circuit(150). The input matching circuit matches the impedance between a gate of the amplifying element and an external part of an input terminal of the low temperature receiving amplifier. The gate bias circuit applies a DC voltage to the gate of the amplifying element. The output matching circuit matches the impedance between a drain of the amplifying element and an external part of an output terminal of the low temperature receiving amplifier. The drain bias circuit applies the DC voltage to the drain of the amplifying element.
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