MEMORY DEVICE AND METHOD OF OPERATING THE SAME

摘要

A memory device and a driving memory thereof are provided to decrease a programming time by verifying multiple levels for one program pulse in the memory device at once. A memory device includes a memory cell array(210), a page buffer(220), and a verification controller(260). The memory cell array includes plural cell strings, which are connected to respective bit lines and a common ground line. During a program verification process, a positive voltage is supplied to the common ground line. The page buffer programs the multi-level cells through the respective bit lines and reads data from the memory cells. The verification controller couples the respective bit line with the page buffer according to the voltage level, which is precharged on the bit line during a program verification or data reading process, such that the page buffer determines a program state of the memory cell.