发明名称 |
Enhanced on-chip decoupling capacitors and method of making same |
摘要 |
An apparatus including a capacitor formed between metallization layers on a circuit, the capacitor including a bottom electrode coupled to a metal layer and a top electrode coupled to a metal via wherein the capacitor has a corrugated sidewall profile. A method including forming an interlayer dielectric including alternating layers of dissimilar dielectric materials in a multilayer stack over a metal layer of a device structure; forming a via having a corrugated sidewall; and forming a decoupling capacitor stack in the via that conforms to the sidewall of the via.
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申请公布号 |
US7416954(B2) |
申请公布日期 |
2008.08.26 |
申请号 |
US20040766674 |
申请日期 |
2004.01.27 |
申请人 |
INTEL CORPORATION |
发明人 |
BLOCK BRUCE A.;LIST RICHARD SCOTT |
分类号 |
H01L21/00;H01L21/02;H01L27/08 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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