Method of forming a layer of silicon carbide on a silicon wafer

摘要

The invention relates to a method of forming a layer of silicon carbide on a silicone wafer. The method includes the following steps: depositing an anti-carburation mask on the wafer using an essentially-check pattern; performing a carburation step under conditions such that the residual stress takes the form of extension and compression respectively; removing the mask; and form of extension and compression respectively; removing the mask; and performing a carburation step under conditions such that the residual stress takes form of compression and extension respectively.