发明名称 Phase change memory having multilayer thermal insulation
摘要 A memory cell includes a first electrode, a second electrode, phase-change material contacting the first electrode and the second electrode, multilayer thermal insulation contacting the phase-change material, and dielectric material contacting the multilayer thermal insulation. The multilayer thermal insulation may include at least an electrically isolating layer and an electrically conducting layer.
申请公布号 US7417245(B2) 申请公布日期 2008.08.26
申请号 US20050265372 申请日期 2005.11.02
申请人 INFINEON TECHNOLOGIES AG 发明人 HAPP THOMAS;PHILIPP JAN BORIS
分类号 H01L29/02 主分类号 H01L29/02
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