| 摘要 |
<p>A thin film transistor, an organic light emitting device including the same, and a manufacturing method thereof are provided to prevent damage to a semiconductor, inflow of impurities, and misalignment caused by deformation of a substrate by forming and crystallizing resistant contact members firstly, and then forming a crystallite semiconductor. A thin film transistor comprises first and second resistant contact members(163a,163b,165a,165b), semiconductor members(154a,154b), a blocking member, input electrodes(173a,173b), output electrodes(175a,175b), an insulation layer, and a control electrode. The first and second resistant contact members are formed on a substrate(110) and contain polysilicon having impurities. The semiconductor member is formed on the resistant contact member and the substrate and contains crystallite silicon. The blocking member is formed on the semiconductor member. The input electrode is formed on the first resistant contact member. The output electrode is formed on the second resistant contact member. The insulation layer is formed on the input electrode, the output electrode, and the blocking member. The control electrode is formed on the insulation layer and located over the semiconductor member.</p> |
