LOW MICROPIPE 100 MM SILICON CARBIDE WAFER,申请号KR20077007642-传众专利搜索

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发明名称	LOW MICROPIPE 100 MM SILICON CARBIDE WAFER
摘要	A method for producing a high quality single crystal wafer of SiC is disclosed, having a diameter of at least 100mm and a micropipe density of less than 25 cm 2 .
申请公布号	KR100854004(B1)	申请公布日期	2008.08.26
申请号	KR20077007642	申请日期	2007.04.03
申请人		发明人
分类号	C30B29/36	主分类号	C30B29/36
代理机构		代理人
主权项
地址

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