发明名称 |
Capacitor with hafnium oxide and aluminum oxide alloyed dielectric layer and method for fabricating the same |
摘要 |
The present invention relates to a capacitor having a hafnium oxide and aluminum oxide alloyed dielectric layer and a method for fabricating the same. The capacitor includes: a lower electrode; a dielectric layer formed on the lower electrode; and an upper electrode formed on the dielectric layer, wherein a portion of the dielectric layer contacting one of the lower electrode and the upper electrode is formed by alloying hafnium oxide and aluminum oxide together.
|
申请公布号 |
US7416936(B2) |
申请公布日期 |
2008.08.26 |
申请号 |
US20070802683 |
申请日期 |
2007.05.24 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
KIL DEOK-SIN;ROH JAE-SUNG;SOHN HYUN-CHUL |
分类号 |
C23C16/40;H01L21/8242;H01L21/02;H01L21/28;H01L21/314;H01L21/316;H01L21/822;H01L27/04;H01L27/08;H01L27/105;H01L27/108;H01L29/76;H01L31/062 |
主分类号 |
C23C16/40 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|