| 摘要 |
A ferroelectric capacitor is formed above a semiconductor substrate (1), and wiring (24a) is then formed. A barrier film (25) for covering the wiring (24a) is formed. A silicon oxide film (26) for filling a space between adjacent wirings (24a) is formed. The silicon oxide film (26) is polished by CMP until the surface of the barrier film (25) is exposed. A barrier film (27) is formed on the barrier film (25) and the silicon oxide film (26). An aluminum oxide film is formed as the barrier films (25, 27). |
