THE RESIST FLOW PROCESS MODELING ALGORITHM FOR ACCURATE LITHOGRAPHY MODELING

摘要

A resist flow process modeling algorithm for optic lithography modeling is provided to generate an accurate lithography model by extracting precisely parameters of elements generated from measurement patterns. To determine an optimum resist flow model, a model adjusted on a process and a target pattern is determined using a lithography system having a resist unit level process. A PEB(Position Error Bound) parameter extracting algorithm on a target pattern for test is selected using the process. Plural diffraction engineering elements are selected. The test pattern is optimized and a corresponding wave length is selected. Then, an algorithm for determining parameters is executed according to the selection based on plural polarization effects. By selecting optimum one of the diffraction engineering elements, a final lithography model is obtained.