METHOD FOR OBTAINING EPITAXIAL P-N STRUCTURES OF GALLIUM ARSENIDE FOR LED OF INFRARED RANGE

摘要

A method for obtaining of p-n structure of gallium arsenide for LEDs of infrared range from a liquid phase, by which epitaxial growth is realized on the gallium arsenide backing by means of forced cooling using limited capacity saturated solution of gallium arsenide alloyed with amphoteric silicon admixture. Isovalent component of bismuth is added to gallium melt, silicon content in solution-melt is determined from proportion.