| 摘要 |
An agent for rendering a halogen-based gas harmless and a method of rendering a halogen-based gas harmless using the agent are provided, wherein the agent renders exhaust gases harmless, the exhaust gases comprising a halogen-based gas exhausted from an etching process, a CVD(chemical vapor deposition) process, and a cleaning process in the fabrication of a semiconductor device or a liquid crystal device. An agent for rendering a halogen-based gas harmless comprises a faujasite zeolite having a SiO2/Al2O3 mole ratio of 2.0 to 2.3 and contains at least one cation of alkali metal cations and alkaline earth metal cations. The agent is a molded body comprising a binder in the amount of 10% or less. The one cation is selected from the group consisting of Na and K. A method of rendering a halogen-based gas harmless comprises contacting a halogen-based gas with the agent for rendering the halogen-based gas harmless.
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