发明名称 |
Manufacturing method of semiconductor device |
摘要 |
This invention offers a manufacturing method to reduce a manufacturing cost of a semiconductor device having a through-hole electrode by simplifying a manufacturing process and to enhance yield of the semiconductor device. A first insulation film is formed on a top surface of a semiconductor substrate. A part of the first insulation film is etched to form an opening in which a part of the semiconductor substrate is exposed. Then a pad electrode is formed in the opening and on the first insulation film. A second insulation film is formed on a back surface of the semiconductor substrate. Then a via hole having an aperture larger than the opening is formed. And a third insulation film is formed in the via hole and on the second insulation film. The third insulation film on a bottom of the via hole is etched to expose the pad electrode. After that, a through-hole electrode and a wiring layer are formed in the via hole. Finally, the semiconductor substrate is cut and separated into a plurality of semiconductor dice.
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申请公布号 |
US7416963(B2) |
申请公布日期 |
2008.08.26 |
申请号 |
US20050182055 |
申请日期 |
2005.07.15 |
申请人 |
UMEMOTO MITSUO;OKAYAMA YOSHIO;TANIDA KAZUMASA;TERAO HIROSHI;NEMOTO YOSHIHIKO |
发明人 |
UMEMOTO MITSUO;OKAYAMA YOSHIO;TANIDA KAZUMASA;TERAO HIROSHI;NEMOTO YOSHIHIKO |
分类号 |
H01L21/00;H01L21/44;H01L23/48;H01L23/52;H01L29/40 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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