发明名称 |
Method of increasing the etch selectivity in a contact structure of semiconductor devices |
摘要 |
By providing an additional silicon dioxide based etch stop layer, a corresponding etch process for forming contact openings for directly connecting polysilicon lines and active areas may be controlled in a highly reliable manner. In another aspect, the etch selectivity of the contact structure may be increased by a modification of the etch behavior of the exposed portion of the contact etch stop layer.
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申请公布号 |
US7416973(B2) |
申请公布日期 |
2008.08.26 |
申请号 |
US20060538111 |
申请日期 |
2006.10.03 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
PETERS CARSTEN;SALZ HEIKE;RICHTER RALF;SCHALLER MATTHIAS |
分类号 |
H01L21/302;H01L21/331;H01L21/44;H01L21/4763 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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