| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a phase change memory element exhibiting an excellent temperature uniformity, the manufacture process of which is comparatively simple, capable of adapting to various cell designs, and the cost of which can be kept at low. <P>SOLUTION: A phase change memory element 200 includes a first electrode 101 and a second electrode 106 including a phase change material, and a metal layer 103 of embedded type with a phase change layer formed between the first electrode 101 and the second element 106 and electrically connected to the first electrode and the second electrode, and further including a conductive path in which a current flows through the metal layer of embedded type with the phase change layer when a bias voltage is supplied to the phase change memory element. <P>COPYRIGHT: (C)2008,JPO&INPIT |
