| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an EEPROM enabling reading data at high speed without using a reference cell transistor. <P>SOLUTION: The semiconductor memory device is provided with a sensing unit including first cross-coupled MOS transistors to sense and amplify difference between voltage applied to a first node and that to a second node, and a unit cell latching data by using second cross-coupled MOS transistor and providing a first signal and a second signal corresponding to the latched data to the first node and the second node. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
