| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device providing high-speed driving of a transistor having a long channel length, and suppressing deterioration in characteristics of a transistor having a short channel length. <P>SOLUTION: This semiconductor device (100) is provided with: a first transistor (110) including a first semiconductor layer (112) having a first polycrystalline region (P1) and a first gate electrode (114); and a second transistor (120) including a second semiconductor layer (122) having a second polycrystalline region (P2) and a second gate electrode (124). A second channel region (C2) has a channel length shorter than the channel length of a first channel region (C1), and the second polycrystalline region (P2) has an average crystal grain size smaller than the average crystal grain size of the first polycrystalline region (P1). <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
