发明名称 ELECTROOPTICAL DEVICE, SUBSTRATE FOR SAME, AND ELECTRONIC EQUIPMENT
摘要 <p><P>PROBLEM TO BE SOLVED: To increase an on current of a transistor while simplifying a layered structure of a pixel. <P>SOLUTION: An electrooptical device includes a TFT 30 having a first gate electrode 3a which is disposed above a semiconductor layer 1a to overlap with a channel region 1a' and to be electrically connected to a scan line 11a and a second gate electrode 3b which is disposed below the semiconductor layer 1a to overlap with the channel region 1a' and to be electrically connected to the scan line 11a; and a data line 6a disposed in the same layer with the second gate electrode 3b. <P>COPYRIGHT: (C)2008,JPO&INPIT</p>
申请公布号 JP2008191517(A) 申请公布日期 2008.08.21
申请号 JP20070027447 申请日期 2007.02.07
申请人 SEIKO EPSON CORP 发明人 ISHII TATSUYA
分类号 G09F9/30;G02F1/1368;H01L29/786 主分类号 G09F9/30
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