发明名称 |
ELECTROOPTICAL DEVICE, SUBSTRATE FOR SAME, AND ELECTRONIC EQUIPMENT |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To increase an on current of a transistor while simplifying a layered structure of a pixel. <P>SOLUTION: An electrooptical device includes a TFT 30 having a first gate electrode 3a which is disposed above a semiconductor layer 1a to overlap with a channel region 1a' and to be electrically connected to a scan line 11a and a second gate electrode 3b which is disposed below the semiconductor layer 1a to overlap with the channel region 1a' and to be electrically connected to the scan line 11a; and a data line 6a disposed in the same layer with the second gate electrode 3b. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
申请公布号 |
JP2008191517(A) |
申请公布日期 |
2008.08.21 |
申请号 |
JP20070027447 |
申请日期 |
2007.02.07 |
申请人 |
SEIKO EPSON CORP |
发明人 |
ISHII TATSUYA |
分类号 |
G09F9/30;G02F1/1368;H01L29/786 |
主分类号 |
G09F9/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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