| 摘要 |
A semiconductor device includes a semiconductor substrate, a plurality of wiring layers provided on the semiconductor substrate, a high frequency wiring provided at a first layer in the plurality of wiring layers, and a plurality of dummy metals provided in a second layer provided between the semiconductor substrate and the first layer having the high frequency wiring. The plurality of wiring layers at a top view includes a high frequency wiring vicinity region and an external region surrounding the high frequency wiring vicinity region, the high frequency wiring vicinity region including a first region enclosed by an outer edge of the high frequency wiring and a second region surrounding the first region. The plurality of dummy metals are disposed dispersedly in the high frequency wiring vicinity region and in the external region respectively. |
