| 发明名称 |
RADIO FREQUENCY DEVICE PROTECTED AGAINST OVERVOLTAGES |
| 摘要 |
A device includes passive radio frequency components formed of portions of metal layers separated by insulating layers and crossed by vias. The insulating layers are positioned on an upper surface of an insulating substrate. Islands of a semiconductor material extend into the insulating substrate from the upper surface. Active integrated circuit components are formed in the islands. |
| 申请公布号 |
US2016163659(A1) |
申请公布日期 |
2016.06.09 |
| 申请号 |
US201514844626 |
申请日期 |
2015.09.03 |
| 申请人 |
STMicroelectronics (Tours) SAS |
发明人 |
Bruno Erwan;Zaid Abdelali |
| 分类号 |
H01L23/66;H01L21/84;H01L21/306;H01L27/02;H01L27/12 |
主分类号 |
H01L23/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A device, comprising:
an insulating substrate; passive radio frequency components formed of portions of metal layers separated by insulating layers that are crossed by vias and laid on an upper surface of the insulating substrate; wherein islands of a semiconductor material extend into the insulating substrate from said upper surface; and active integrated circuit components formed in said islands; and wherein the passive radio frequency components are formed over portions of the insulating substrate that are devoid of islands. |
| 地址 |
Tours FR |
