SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

摘要

A semiconductor device comprises a conductive layer, a first insulating film, a barrier metal, a contact electrode, and a surface electrode. The first insulating film is located on the conductive layer and comprises a contact hole reaching the conductive layer. At least a surface part of the first insulating film is a BPSG film. The barrier metal covers an inner surface of the contact hole. The contact electrode is located in the contact hole and on the barrier metal. The surface electrode is located on the BPSG film and the contact electrode. The barrier metal is not interposed between the BPSG film and the surface electrode so that the surface electrode is directly in contact with the BPSG film. At least a part of the surface electrode is a bonding pad.

主权项

1. A semiconductor device comprising:
a conductive layer having a conductive property; a first insulating film located on the conductive layer and comprising a contact hole reaching the conductive layer, at least a surface part of the first insulating film being a BPSG film; a barrier metal covering an inner surface of the contact hole; a contact electrode located in the contact hole and on the barrier metal; and a surface electrode located on the BPSG film and the contact electrode;wherein
the barrier metal is not interposed between the BPSG film and the surface electrode so that the surface electrode is directly in contact with the BPSG film, and at least a part of the surface electrode is a bonding pad.