发明名称 MODIFIER FOR LOW DIELECTRIC CONSTANT FILM, AND METHOD FOR PRODUCTION THEREOF
摘要 <p>Disclosed is a modifier for lowering the relative dielectric constant of a low dielectric constant film for use in a semiconductor device. Specifically disclosed is a modifier for a low dielectric constant film, which is characterized by comprising a silicon compound represented by the formula (1) as an active ingredient. R<SUB>3-n</SUB>H<SUB>n</SUB>SiN<SUB>3</SUB> (1) wherein R represents a C1-C4 alkyl group; and n represents an integer of 0 to 3.</p>
申请公布号 WO2008099522(A1) 申请公布日期 2008.08.21
申请号 WO2007JP63777 申请日期 2007.07.11
申请人 CENTRAL GLASS COMPANY, LIMITED;OGAWA, TSUYOSHI;OHASHI, MITSUYA 发明人 OGAWA, TSUYOSHI;OHASHI, MITSUYA
分类号 H01L21/312;H01L21/768;H01L23/522 主分类号 H01L21/312
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