| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a novel method of manufacturing a GaN-based light emitting diode element which includes a translucent substrate having an irregular surface. <P>SOLUTION: The method of manufacturing a GaN-based light emitting diode element has steps of (A) forming an epi-wafer by epitaxially growing a GaN-based semiconductor on the surface of the translucent substrate having cut grooves formed therein, (B) processing the substrate-side surface of the epi-wafer formed in the step (A) to have the irregular surface, and (C) separating the epi-wafer at positions of the cut grooves by an external force. <P>COPYRIGHT: (C)2008,JPO&INPIT |
