发明名称 |
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE, STORAGE MEDIUM STORING CELL LIBRARY, AND METHOD FOR DESIGNING SEMICONDUCTOR INTEGRATED CIRCUIT |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device which suitably harmonizes the increase in power consumption by leakage current of MOSFETs and the working speed in the semiconductor integrated circuit device constituted by the MOSFETs. SOLUTION: On a plurality of signal paths in the semiconductor integrated circuit device, in view of the delay such that signals are transmitted along the signal paths, a path having a margin in the delay is constituted with a MOSFET with high threshold voltage, on the other hand, a path not having the margin in the delay is constituted with a MOSFET with low threshold voltage which has a high working speed with large leakage current. COPYRIGHT: (C)2008,JPO&INPIT
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申请公布号 |
JP2008193102(A) |
申请公布日期 |
2008.08.21 |
申请号 |
JP20080031324 |
申请日期 |
2008.02.13 |
申请人 |
HITACHI LTD |
发明人 |
KATO NAOKI;YANO KAZUO;AKITA YOHEI;HIRAKI MITSURU |
分类号 |
H01L21/822;G06F17/50;H01L21/82;H01L27/04;H03K19/00 |
主分类号 |
H01L21/822 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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