PLASMA ETCHING METHOD, PLASMA ETCHING APPARATUS, CONTROL PROGRAM AND COMPUTER-READABLE STORAGE MEDIUM

摘要

PROBLEM TO BE SOLVED: To provide a plasma etching method and apparatus capable of improving a production yield with no increase in manufacturing costs by preventing a mask collapse without using Xe gas, even when forming a hole having a high aspect ratio. SOLUTION: A silicon oxide film 103 and a silicon nitride film 102 are sequentially plasma-etched by using a patterned lower resist film 104 as a mask to form holes 112. Finally, a BPSG film 101 which is a lowest layer in an etching target object is finally plasma-etched by using the lower resist film 104 as the mask to form holes 113. A gaseous mixture of C4F6gas and C3F8gas is used in the plasma etching of the BPSG film 101. COPYRIGHT: (C)2008,JPO&INPIT