| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device whose conductivity in a channel area with a semiconductor molecule as a channel material is excellent without restriction due to inter molecular charge mobility, moreover, can be easily, certainly manufactured. SOLUTION: A gate insulating film 2 is located on a substrate 1 served as a gate electrode as well, and a source electrode 3 and drain electrode 4 are oppositely formed on it. Then, utilizing a self-organizing action of an organic semiconductor molecule 5, a single molecular film composed of the semiconductor molecule 5 is formed on the sides of the electrodes 3, 4. Next, after locating particles 6 composed of such as gold in the gap between the electrode 3 and electrode 4, the adjacent particles 6 are joined by linker molecules 7 each other to form a conductor 8 which has a high conductivity and whose both sides are joined with the semiconductor molecules 5. A field-effect transistor 10 can be substantially regarded as one which semiconductor elements (field-effect transistor) 10a, 10b formed with a single molecule film of the semiconductor molecule 5 as a channel 9 are connected by the conductor 8 in series. COPYRIGHT: (C)2008,JPO&INPIT
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