| 摘要 |
PROBLEM TO BE SOLVED: To improve the driving capability of a semiconductor device having a trench structure. SOLUTION: The trench 10 to form concavity and convexity in a well 5 in a gate width direction is formed in the well 5 of the semiconductor device. A gate electrode 2 is formed in inner and upper surface portions of the trench 10 through an insulating film 7. A source region 3 is formed in one side of the gate length direction of the gate electrode 2, and a drain region 4 is disposed in the other side thereof. Further, the source region 3 and drain region 4 are all formed into the depth adjacent to the bottom of the gate electrode 2 (adjacent to the bottom of the trench 10). Thus, a current dominantly flowed to a shallow portion of the gate electrode 2 is uniformly supplied to the entire part of the trench 10 by forming the source region 3 and drain region 4 deeply into the bottom, so that the effective gate width expansion is achieved by the concavity and convexity formed in the well 5. This allows the semiconductor device 1 to reduce the on-state resistance and enhance the driving capability. COPYRIGHT: (C)2008,JPO&INPIT
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