| 摘要 |
PROBLEM TO BE SOLVED: To stably form an oxynitride film of the same quality and characteristics. SOLUTION: This method for forming an oxynitride film in a wafer 1 by using an MMT device equipped with a susceptor 21 installed in a treatment chamber 14 of a treatment container 11 for holding a wafer 1; a shower head 26 for supplying gas toward the wafer 1; a cylindrical electrode 15 for exciting gas; and a cylindrical magnet 19 forming a magnetic field. In an atmosphere that oxygen gas Go is independently supplied to the treatment chamber 14, a high frequency power is applied, and a plasma is ignited, and after the lapse of a period T when the plasma is stabilized, nitrogen gas Gn is supplied, and plasma is maintained, and the oxynitride film is plasma-treated on the wafer 1. The plasma is generated by the oxygen gas independent atmosphere where ignition stably occurs each time, and then nitrogen gas is supplied so that even in the mixed atmosphere of the oxygen gas and the nitrogen gas, the stable plasma can be generated each time, and that the oxynitride film of the same quality and characteristics can be stably formed. COPYRIGHT: (C)2008,JPO&INPIT
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